The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

On September 22, Atoman signed a cooperation agreement with Guangzhou Third-generation Semiconductor Innovation Center of Xidian University (hereinafter referred to as "Innovation Center").

On September 22, Atoman signed a cooperation agreement with Guangzhou Third-generation Semiconductor Innovation Center of Xidian University (hereinafter referred to as "Innovation Center").

The 15th National Conference on Molecular Beam Epitaxy (MBE) will be held on October 10-13, 2023 in Fenhu High-tech Industrial Development Zone, Jiangsu Province (Wyndham Grand Suzhou Fenhu). Atoman Semiconductor Technology Co., Ltd. (hereinafter referred to as "Atoman") and DCA, the world's leading MBE manufacturer, will participate in the event.

AR microLED microdisplay developer Mojo Vision announced that it has developed the world's highest-density (1.87 um pixel pitch) red (620 nm) microLED microdisplay. Mojo produced a first working prototype of its display, that is based on 1.37 um blue LEDs with QD color conversion

Aerospace & defence firm Airbus of Toulouse, France and integrated device manufacturer STMicroelectronics of Geneva, Switzerland have signed an agreement to cooperate on power electronics R&D to support more efficient and lighter power electronics, essential for future hybrid-powered aircraft and full-electric urban air vehicles.

With support from the Japan Ministry of the Environment’s ‘Project to Accelerate the Social Implementation and Spread of Components and Materials for Innovative CO2 Reductions’, Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, and Japan-based Powdec K.K. have jointly developed a high-performance horizontal gallium nitride (GaN) power device that can lead to improved performance in power converters used in solar power generation and other equipment....

On the morning of June 9th, the signing ceremony of the GaN Semiconductor Research Center jointly built by the Guangzhou Research Institute of Xidian University (hereinafter referred to as the Guangzhou Research Institute) and Atoman Semiconductor was successfully held.

On April 3, 2023, Atoman signed an investment agreement with Zhuji Municipal Government at the 2023 Zhuji Development Conference. Atoman plans to invest in the construction of an epitaxial wafer factory in Zhuji Development Zone to engage in the production of high-performance compound semiconductor epitaxial wafers. 

In March 2023, Atoman moved into Chengyi Building located in the central business district of Jimei District, Xiamen City. The building is adjacent to Xiamen Garden Expo Park, with beautiful surrounding environment and superior geographical location.

On September 1, 2022, Atoman and the internationally renowned GaN epitaxial company, IVWorks, officially signed a joint technology development agreement of large-scale Hybrid-MBE system. Atoman and the partners will carry out MBE equipment design, R&D, manufacturing and verification around GaN, and will optimize the epitaxial production process by combining the partner's existing AI technology. Atoman is dedicated to enhancing the industrial value of MBE system in power electronics, radio frequency, optoelectronics and other fields....