GaAs
GaAs epitaxial materials demonstrate excellent performance in the fields of radio frequency (RF) and optoelectronics. GaAs pHEMT is widely used in wireless communication RF front-end modules, while GaAs VCSEL is extensively applied in 3D sensing and data centers. To meet the performance requirements of RF and optoelectronic chips, Atoman utilizes internationally leading MBE epitaxial production technology, offering high-quality GaAs epitaxial wafers to customers worldwide.
RF:
pHEMT
mHEMT
HBT
Optoelectronics：
Schottky Diode
Hall Sensor
PIN-PD
QWIP
DBR
EEL
InP epitaxial materials are widely used in the near-infrared detection, optical communication, and high-frequency microwave RF fields due to their excellent performance in the near-infrared wavelength range and ultra-high electron mobility. With the increasing demand for data transmission efficiency in modern technology, high-speed optical communication requires chips with continuously improving performance. To meet the performance requirements of optoelectronic and RF chips, Atoman utilizes internationally leading MBE epitaxial production technology, providing high-quality InP epitaxial wafers to customers worldwide."
Optoelectronics：
QCL
APD
UTC-PD
PIN-PD
RF：
HEMT
InP
GaN
GaN is a representative of third-generation semiconductor materials, known for its advantages such as high breakdown voltage and high saturation rate. It is gradually replacing traditional silicon-based devices and plays a significant role in the fields of microwave RF and power electronics. Atoman utilizes internationally leading Hybrid-MBE technology to provide high-quality and cost-effective GaN epi-wafers to customers both domestically and internationally.
RF：
GaN-on-SiC HEMT
GaN-on-Si HEMT
S/D n+ GaN re-growth
Power：
GaN-on-Si HEMT
GaN-on-Sapphire HEMT
