HEMTs with a Al0.25Ga0.75N channel combine record-breaking speeds with an impressive breakdown voltage. Researchers from Cornell University are claiming to have broken the speed record for AlGaN-based transistors. The team’s HEMTs, which have a T-shaped gate and an Al0.25Ga0.75N channel, have a cut-off frequency, fT, of 67 GHz, and a maximum oscillation frequency, fmax, of 166 GHz. Another asset of these transistors is an average breakdown field exceeding 2 MV cm-1. This helps to ensure a high value for Johnson’s figure of merit–the product of the breakdown voltage and fT–and highlights the potential of these device for serving in next-generation high-power RF applications. Replacing the GaN channel of a HEMT with an AlGaN alloy has much promise, as it has the potential to increase the breakdown voltage due to the highe...
Substrate and epiwafer markets are fueled by strong growth in power electronic and photonic compound semiconductors. OUTLINE ● The compound semiconductor substrate market is expected to reach US$3.3 billion in 2029, with a 17% CAGR between 2023 and 2029.● Wolfspeed, Coherent Corp., SEDI … Substrate players consistently craft new strategies to diversify their product portfolios and enhance their market presence.● Compound semiconductor technologies showcase diverse advancements across sectors: SiC , GaN , InP … Compound semiconductors have emerged as a transformative influence across various industries. SiC’s dominance in the automotive sector, especially in the domain of 800V EVs , drives a billion-dollar market. Simultaneously, GaN power electronics is expanding its presence in both the consumer and automotive fields. At Yo...
The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance.
The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.
AR microLED microdisplay developer Mojo Vision announced that it has developed the world's highest-density (1.87 um pixel pitch) red (620 nm) microLED microdisplay. Mojo produced a first working prototype of its display, that is based on 1.37 um blue LEDs with QD color conversion
Aerospace & defence firm Airbus of Toulouse, France and integrated device manufacturer STMicroelectronics of Geneva, Switzerland have signed an agreement to cooperate on power electronics R&D to support more efficient and lighter power electronics, essential for future hybrid-powered aircraft and full-electric urban air vehicles.
With support from the Japan Ministry of the Environment’s ‘Project to Accelerate the Social Implementation and Spread of Components and Materials for Innovative CO2 Reductions’, Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, and Japan-based Powdec K.K. have jointly developed a high-performance horizontal gallium nitride (GaN) power device that can lead to improved performance in power converters used in solar power generation and other equipment....
